@techreport{oai:jaxa.repo.nii.ac.jp:00006090,
 author = {木下, 恭一 and 緒方, 康行 and 足立, 聡 and 鶴, 哲也 and 宮田, 浩旭 and 村松, 祐治 and 依田, 眞一 and Kinoshita, Kyoichi and Ogata, Yasuyuki and Adachi, Satoshi and Tsuru, Tetsuya and Miyata, Hiroaki and Muramatsu, Yuji and Yoda, Shinichi},
 month = {Mar},
 note = {We have succeeded in scaling up of platy In(0.1)Ga(0.9)As single crystals grown by the traveling liquidus-zone (TLZ) method from 10 to 20 mm in width without deteriorating compositional uniformity. The TLZ method which we have invented for growing homogeneous mixed crystals requires diffusion-limited mass transport and convection in a melt should be avoided. In that point, large diameter crystals for substrate use were difficult to be grown on the ground because convection in a melt is intensified by the enlargement of diameter. Therefore, we attempted to grow platy In(1-x)Ga(x)As crystals. Merits of platy crystals are suppression of convection in a melt by limiting the thickness of the melt and achievement of sufficient area for substrate use. Successful scaling up of platy crystals shows that enlargement of the width of platy crystals will not affect the intensity of convection in a melt. This result supports the hypothesis that convection in a platy melt is limited by its small thickness and not by its width., 資料番号: AA0049798002, レポート番号: JAXA-SP-05-036E},
 title = {Scaling up of TLZ-grown platy In(0.3)Ga(0.7)As crystals for semiconductor laser substrates},
 year = {2006}
}