{"created":"2023-06-20T14:39:20.638985+00:00","id":6091,"links":{},"metadata":{"_buckets":{"deposit":"2a3ebf1e-e421-4c19-b3ad-d31123f015c4"},"_deposit":{"created_by":1,"id":"6091","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"6091"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00006091","sets":["1887:1893","9:789:1031:1036"]},"author_link":["30371","30374","30365","30376","30377","30369","30366","30373","30367","30370","30372","30378","30375","30380","30368","30379"],"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"20","bibliographicPageStart":"13","bibliographicVolumeNumber":"JAXA-SP-05-036E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構特別資料"},{"bibliographic_title":"JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals","bibliographic_titleLang":"en"}]}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"In the growth of In(0.3)Ga(0.7)As single crystals, polycrystallization at the initial interface with lattice-mismatched seeds is a major problem because no homogeneous In(0.3)Ga(0.7)As seed crystals have been obtained and usually GaAs crystals are used as seeds. Hence, a mechanism of polycrystallization at the initial interface was investigated. In this paper, a local misfit stress at the interface is calculated. Then it is compared with the critical resolved shear stress (CRSS). It was determined that the polycrystallization at the initial interface is related to the magnitude of the misfit stress and to that of the CRSS. We discuss growth of larger In(0.3)Ga(0.7)As single crystals by avoiding the polycrystallization at the initial interface.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0049798003","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-SP-05-036E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-113X","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11984031","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"エイ・イー・エス"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"},{"subitem_text_value":"東京工業大学"},{"subitem_text_value":"宇宙航空研究開発機構 宇宙科学研究本部"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Advanced Engineering Services Co. Ltd."},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"},{"subitem_text_language":"en","subitem_text_value":"Tokyo Institute of Technology"},{"subitem_text_language":"en","subitem_text_value":"Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"宮田, 浩旭"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"緒方, 康行"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"足立, 聡"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"鶴, 哲也"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"村松, 祐治"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"木下, 恭一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"小田原, 修"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"依田, 眞一"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Miyata, Hiroaki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogata, Yasuyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Adachi, Satoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tsuru, Tetsuya","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Muramatsu, Yuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kinoshita, Kyoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Odawara, Osamu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoda, Shinichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"49798003.pdf","filesize":[{"value":"3.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"49798003.pdf","url":"https://jaxa.repo.nii.ac.jp/record/6091/files/49798003.pdf"},"version_id":"06c505e1-0e9d-4697-85ca-7222f25b5304"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"多結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaAs","subitem_subject_scheme":"Other"},{"subitem_subject":"飽和溶融帯移動法","subitem_subject_scheme":"Other"},{"subitem_subject":"光通信","subitem_subject_scheme":"Other"},{"subitem_subject":"フォトルミネッセンス","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"多結晶化","subitem_subject_scheme":"Other"},{"subitem_subject":"結晶格子","subitem_subject_scheme":"Other"},{"subitem_subject":"polycrystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"traveling liquidus zone method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"optical communication","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"polycrystallization","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal lattice","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1036","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"6091","relation_version_is_last":true,"title":["Investigation on polycrystallization mechanism at initial interfaces in In(x)Ga(1-x)As (x is approximately 0.3) bulk crystals on lattice mismatched seeds"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-06-21T08:02:22.589453+00:00"}