@techreport{oai:jaxa.repo.nii.ac.jp:00006274,
 author = {今泉, 充 and 住田, 泰史 and 岐部, 公一 and 森岡, 千晴 and Imaizumi, Mitsuru and Sumita, Taishi and Kibe, Koichi and Morioka, Chiharu},
 month = {Jan},
 note = {Triple-junction (3J) space solar cells were irradiated with 10 MeV protons at 175 K. The electrical performance of the 3J solar cells was measured in situ under AM0-light illuminated condition at low temperature. The electrical performance of the solar cells decreases with increasing proton fluence, and at a proton fluence of 1 x 10(exp 13)/sq cm, short-circuit current (Isc) and open-circuit voltage (Voc) become approximately 87 and 80 percent of the initial values, respectively, indicating higher radiation resistance compared to Si solar cells. No significant difference in the degradation behavior of the electrical performance is observed between low temperature and RT. The influences of light-illumination and current-injection on the electrical properties were studied at low temperature to minimize the thermal annealing effect. For AM0 light illumination, the change in the electrical properties of the 3J solar cells under AM0 illumination was investigated at 175 K. The electrical performance does not change by the illumination for 370 min. On the other hand, by current injection at 155 K, a significant recovery of the electrical performance of proton-irradiated 3J solar cells is observed. At current injection times of 4,500 sec, a 10 percent recovery of Isc and Voc to the values after irradiation for the fluence of 3 x 10(exp 13)/sq cm is observed., 資料番号: AA0049054018, レポート番号: JAXA-SP-05-008},
 title = {III-V族化合物太陽電池の耐放射線性に関する研究:小型軽量パワーシステム},
 year = {2006}
}