@techreport{oai:jaxa.repo.nii.ac.jp:00006294,
 author = {池田, 直美 and 久保山, 智司 and 松田, 純夫 and Ikeda, Naomi and Kuboyama, Satoshi and Matsuda, Sumio},
 month = {Jan},
 note = {Power MOSFET is an indispensable and important device for a power supply system that determines the conversion efficiency of the system. Since it is very sensitive to radiation, it is necessary to use radiation tolerant power MOSFETS. JAXA has developed this device since 1996. Fundamental research has completed and prototypes have proved their radiation tolerance and high performance. In FY16, nine kinds of MOSFETS with different ratings were developed and their electrical and rad-hard performance was proven. Also assembly process was improved for higher yield and techniques for fabrication and high-mix and low-volume manufacturing were established., 資料番号: AA0049054038, レポート番号: JAXA-SP-05-008},
 title = {パワーMOSFETの開発成果},
 year = {2006}
}