{"created":"2023-06-20T14:39:51.902934+00:00","id":6686,"links":{},"metadata":{"_buckets":{"deposit":"dc8eae7a-d2e5-4986-afbf-bc612d3264ef"},"_deposit":{"created_by":1,"id":"6686","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"6686"},"status":"published"},"_oai":{"id":"oai:jaxa.repo.nii.ac.jp:00006686","sets":["1887:1893","9:1368:1395:1396"]},"author_link":["34279","34278"],"item_3_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"InGaAs結晶成長用原料作製法の検討"}]},"item_3_biblio_info_10":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-03-25","bibliographicIssueDateType":"Issued"},"bibliographicVolumeNumber":"JAXA-CR-03-002E","bibliographic_titles":[{"bibliographic_title":"宇宙航空研究開発機構契約報告"},{"bibliographic_title":"JAXA Contract Report","bibliographic_titleLang":"en"}]}]},"item_3_description_16":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"今期は、1)平均組成x=0.3〜0.4の傾斜組成分布を持つ長さ150mmの組成的過冷却のない傾斜組成多結晶原料を3本製作した。この原料から組成分布をRaman散乱により非破壊で測定し一端のIn組成が0.8以上になるように試料を切り出した。試料形状は直径10mm、長さ100mmである。これらの試料をTLZ法による成長実験に使用した。2)TLZ法による結晶成長実験条件の検討はまずるつぼ材質や形状などの実験条件を宇宙開発事業団条件と一致させた。成長領域での温度勾配を40/cm以上にしかつTLZが可能な温度分布を実現するため、温度分布測定を実施した。その結果に基づいてTLZ法による成長実験を実施した。単結晶化は実現していないが得られた組成分布などの検討を進めている。3)単結晶が得られていないため結晶特性の評価は十分ではないが、Raman散乱や組織観察は実施。4)成長条件決定に必要なデータを取るため10mm径および2mm径の試料について3度の急冷実験を実施した。","subitem_description_type":"Abstract"}]},"item_3_description_17":{"attribute_name":"抄録（英）","attribute_value_mlt":[{"subitem_description":"The following researches have been carried out in order to make source materials for the TLZ-experiments, of which purpose is growth of InGaAs single crystal having uniform composition and in order to obtain the suitable experimental conditions for TLZ growth method. 1) The 3 polycrystalline source materials having average composition of x = 0.3 to 0.4 were prepared by a directional solidification method. Several starting materials for TLZ experiments were cut from the source materials, of which compositions were nondestructively measured by Raman scattering method. The diameter is 10 mm and the length is 100 mm. 2) For the TLZ experiment same experimental system and conditions as the NASDA's one were made except higher temperature gradient of 40 C/cm. Precise temperature profile measurement has been carried out. On the basis of the results the several TLZ growths were carried out. Single crystal has not been obtained yet but the composition profiles and Raman scattering were examined. 3) In order to obtain the necessary information for crystal growth, three quench experiments were carried out in the sample with 2 and 10 mm diameter.","subitem_description_type":"Other"}]},"item_3_description_32":{"attribute_name":"資料番号","attribute_value_mlt":[{"subitem_description":"資料番号: AA0046956000","subitem_description_type":"Other"}]},"item_3_description_33":{"attribute_name":"レポート番号","attribute_value_mlt":[{"subitem_description":"レポート番号: JAXA-CR-03-002E","subitem_description_type":"Other"}]},"item_3_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"宇宙航空研究開発機構"}]},"item_3_publisher_9":{"attribute_name":"出版者（英）","attribute_value_mlt":[{"subitem_publisher":"Japan Aerospace Exploration Agency (JAXA)"}]},"item_3_source_id_21":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1349-1148","subitem_source_identifier_type":"ISSN"}]},"item_3_source_id_24":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11999050","subitem_source_identifier_type":"NCID"}]},"item_3_text_6":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"住友電気工業"}]},"item_3_text_7":{"attribute_name":"著者所属（英）","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Sumitomo Electric Industries Ltd."}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"住友電気工業"}],"nameIdentifiers":[{"nameIdentifier":"34278","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sumitomo Electric Industries Ltd.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"34279","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-01-16"}],"displaytype":"detail","filename":"46956000.pdf","filesize":[{"value":"4.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"46956000.pdf","url":"https://jaxa.repo.nii.ac.jp/record/6686/files/46956000.pdf"},"version_id":"e7e30509-8d41-4266-a495-f2e9950c3080"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"結晶成長","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaAs","subitem_subject_scheme":"Other"},{"subitem_subject":"単結晶","subitem_subject_scheme":"Other"},{"subitem_subject":"TLZ法","subitem_subject_scheme":"Other"},{"subitem_subject":"ラマン散乱","subitem_subject_scheme":"Other"},{"subitem_subject":"温度勾配","subitem_subject_scheme":"Other"},{"subitem_subject":"指向性凝固","subitem_subject_scheme":"Other"},{"subitem_subject":"急冷","subitem_subject_scheme":"Other"},{"subitem_subject":"crystal growth","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"InGaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"single crystal","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"TLZ method","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Raman scattering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"temperature gradient","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"directional solidification","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"quenching","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"technical report","resourceuri":"http://purl.org/coar/resource_type/c_18gh"}]},"item_title":"Investigation of preparation methods of InGaAs materials for crystal growth","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of preparation methods of InGaAs materials for crystal growth","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["1396","1893"],"pubdate":{"attribute_name":"公開日","attribute_value":"2015-03-26"},"publish_date":"2015-03-26","publish_status":"0","recid":"6686","relation_version_is_last":true,"title":["Investigation of preparation methods of InGaAs materials for crystal growth"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-06-20T19:45:37.200166+00:00"}