@inproceedings{oai:jaxa.repo.nii.ac.jp:00008092,
 author = {吉田, 和生 and 田島, 道夫 and 曽根, 良嗣 and 川北, 史朗 and 仁木, 栄 and 櫻井, 啓一郎 and Yoshida, Kazuki and Tajima, Michio and Sone, Yoshitsugu and Kawakita, Shiro and Niki, Shigeru and Sakurai, Keiichiro},
 book = {第24回宇宙エネルギーシンポジウム　平成16年度, The Twenty-fourth Space Energy Symposium March 7, 2005},
 month = {Jun},
 note = {Cu(In,Ga)Se2 (CIGS) solar cells have the advantages of low weight and high radiation receptivity, which are quite attractive for the space application. The high radiation tolerance has been explained by the recovery effect during low-temperature annealing. However, the process of the radiation degradation and the annealing effect has not yet been clarified. We investigated the radiation-induced defects in poly-crystalline CIGS by photoluminescence (PL) spectroscopy. The proton irradiation degraded the near band-edge (1.1 eV) emission and induced the deep-level emission at 0.8 eV. We suggest that the radiation-induced defects are responsible for the deep-level emission. The heat treatment at 120 C restored the 1.1 eV emission and reduced the 0.8 eV band. After annealing, the intensity of the 1.1 eV emission from CIGS solar cells became higher than that from CIGS thin films. We suggest that this phenomenon is caused by the difference in the surface/interface conditions of the CIGS layers., 資料番号: AA0049120006},
 pages = {27--31},
 publisher = {宇宙航空研究開発機構宇宙科学研究本部, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)},
 title = {Cu(In, Ga)Se2太陽電池における陽子線照射欠陥のフォトルミネッセンス解析},
 year = {2005}
}