Tokyo University of Science
Tokyo University of Science
Tokyo University of Science
Tokyo University of Science
Kumamoto National College of Technology
Kumamoto National College of Technology
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
38 - 41
発行年
2013-03-29
抄録（英）
The optical and electrical properties of proton irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the thin films that compose the CIGS solar cell structure were investigated. The transmittance and resistivity of transparent conducting oxide window layers remained constant for a fluence of up to 3 × 10(exp 15) cm(exp -2). For CIGS thin films, the number of non-radiative recombination center increases under proton irradiation. In CIGS solar cells, decreasing JSC reflected the degradation of the depletion layer of the CdS/CIGS interface. These results constitute the first step in clarifying the degradation mechanism of CIGS solar cells.
内容記述
形態: カラー図版あり
内容記述（英）
Physical characteristics: Original contains color illustrations
Impacts of proton irradiation on optical and electrical properties of Cu(In,Ga)Se2 thin films and solar cells
61889007.pdf
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