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  1. コンテンツタイプ
  2. 紀要論文 (Departmental Bulletin Paper)
  1. 機関資料(JAXA, former ISAS, NAL, NASDA)
  2. 旧機関資料 (JAXA, former-ISAS, NAL, NASDA)
  3. 宇宙科学研究所: ISAS Report等を含む (former ISAS (The Institute of Space and Astronautical Science): Including ISAS Report etc.)
  4. The Institute of Space and Astronautical Science report

InP Solar Cells and their Flight Experiments

https://jaxa.repo.nii.ac.jp/records/31411
https://jaxa.repo.nii.ac.jp/records/31411
c1d9960f-aba7-44ae-a2f1-512f70d5eeb8
名前 / ファイル ライセンス アクション
SA0035133.pdf SA0035133.pdf (3.6 MB)
Item type 紀要論文 / Departmental Bulletin Paper(1)
公開日 2015-03-26
タイトル
タイトル InP Solar Cells and their Flight Experiments
言語 en
言語
言語 eng
キーワード
言語 en
主題Scheme Other
主題 high-efficiency solar cell
キーワード
言語 en
主題Scheme Other
主題 InP solar cell
キーワード
言語 en
主題Scheme Other
主題 environmental test
キーワード
言語 en
主題Scheme Other
主題 radiation resistance
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_6501
資源タイプ departmental bulletin paper
著者 TAKAHASHI, Keiji

× TAKAHASHI, Keiji

en TAKAHASHI, Keiji

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YAMAGUCHI, Masafumi

× YAMAGUCHI, Masafumi

en YAMAGUCHI, Masafumi

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TAKAMOTO, Tatsuya

× TAKAMOTO, Tatsuya

en TAKAMOTO, Tatsuya

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IKEGAMI, Shingo

× IKEGAMI, Shingo

en IKEGAMI, Shingo

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OHNISHI, Akira

× OHNISHI, Akira

en OHNISHI, Akira

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HAYASHI, Tomonao

× HAYASHI, Tomonao

en HAYASHI, Tomonao

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USHIROKAWA, Akio

× USHIROKAWA, Akio

en USHIROKAWA, Akio

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KOHBATA, Masahiko

× KOHBATA, Masahiko

en KOHBATA, Masahiko

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ARAI, Hidetoshi

× ARAI, Hidetoshi

en ARAI, Hidetoshi

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HASHIMOTO, Katsumasa

× HASHIMOTO, Katsumasa

en HASHIMOTO, Katsumasa

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ORH, Takeshi

× ORH, Takeshi

en ORH, Takeshi

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OKAZAKI, Hitoshi

× OKAZAKI, Hitoshi

en OKAZAKI, Hitoshi

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TAKAMURA, Hideto

× TAKAMURA, Hideto

en TAKAMURA, Hideto

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URA, Mitsuru

× URA, Mitsuru

en URA, Mitsuru

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OHMORI, Masamichi

× OHMORI, Masamichi

en OHMORI, Masamichi

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著者所属(英)
en
The Institute of Space and Astronautical Science
著者所属(英)
en
NTT Opto-electronics Laboratories
著者所属(英)
en
Electronic Materials & Components Research Laboratories, Nippon Mining Co., Lte.
著者所属(英)
en
NEC Corporation
著者所属(英)
en
The Institute of Space and Astronautical Science
著者所属(英)
en
Chiba Institute of Technology
著者所属(英)
en
Tokyo Engineering University
著者所属(英)
en
The Institute of Space and Astronautical Science
著者所属(英)
en
NEC Corporation
著者所属(英)
en
NEC Corporation
著者所属(英)
en
NEC CorporationV
著者所属(英)
en
Electronic Materials & Components Research Laboratories, Nippon Mining Co., Lte.
著者所属(英)
en
Electronic Materials & Components Research Laboratories, Nippon Mining Co., Lte.
著者所属(英)
en
Electronic Materials & Components Research Laboratories, Nippon Mining Co., Lte.
著者所属(英)
en
Electronic Materials & Components Research Laboratories, Nippon Mining Co., Lte.
出版者
出版者 宇宙科学研究所
出版者(英)
出版者 Institute of Space and Astronautical Science
書誌情報 en : The Institute of Space and Astronautical Science report

巻 644, p. 1-57, 発行日 1992-03
抄録(英)
内容記述タイプ Other
内容記述 We have developed high-efficiency homojunction 1 cm × 2 cm InP space solar cells by diffusing In_2S_3 into p type InP substrates and investigated their fundamental characteristics such as electrical and mechnical characteristics and thermal properties. On the radiation resistant mechanism of InP cells, we have studied InP cells fabricated at NTT Laboratories and found superior properties such as room temperture annealing and minority carrier injection enhanced annealing phenomena for radiation-induced defects in InP crystals with 1 MeV electron irradiation. We have also found that InP cells are superior to Si and GaAs cells in radiation resistance owing to the energy band structure and lower defect introduction rates of InP cells. Various tests were conducted to evaluate the developed InP cells in simulated space environments and to give them the qualification for space applications. In irradiation tests, proton energy was varied from 0.015 to 15 MeV with a fluence ranging from 10^11 to 10^13 protons/cm^2 and electron energy was varied from 0.5 to 3 MeV with a fluence raging from 10^14 to 10^16 electrons/cm^2. As a result, we have confirmed that series resistance in the InP cells increases owing to a decrease in the majority carrier concentration at higher fluences even for proton irradiation. The developed InP cells were mounted on the twelfth scientific satellite "EXOS-D" as a radiation degradation characteristic instrument. The cells were also mounted on a lunar orbiter on board the thirteenth scientific satellite " MUSES-A" as a power source for the orbiter. We succeeded in working those InP cells in orbit. Large decreases in the short circuit current and in the open circuit voltage for the InP cells without coverglass on board the twelfth satellite turned out to be due to lower energy proton irradiation with our new analytical model. However, it has been confirmed that no degradation of the InP cells occurs by using thin coverglass of 50 μm in thickness. In the lunar orbiter, output power of its solar array was constant as predicted till the separation from the thirteenth satellite to place the orbiter in orbit around the moon. We have concluded that the InP solar cells are applicable to space solar cells under severe radiation environments in orbit.
ISSN
収録物識別子タイプ ISSN
収録物識別子 0285-6808
書誌レコードID
収録物識別子タイプ NCID
収録物識別子 AA10632072
資料番号
内容記述タイプ Other
内容記述 資料番号: SA0035133000
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