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Development of the Space Use Power MOSFETs of 100-250V class
https://jaxa.repo.nii.ac.jp/records/39266
https://jaxa.repo.nii.ac.jp/records/39266825108d8-b104-4fba-b1c6-f48f81b8ba10
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Development of the Space Use Power MOSFETs of 100-250V class | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
その他のタイトル | ||||||
その他のタイトル | 宇宙用パワーMOSFET 100-250Vクラスの開発 | |||||
著者 |
小林, 孝
× 小林, 孝× 井上, 正範× 桐畑, 文明× 久保山, 智司× 池田, 直美× Kobayashi, Takashi× Inoue, Masanori× Kirihata, Humiaki× Kuboyama, Satoshi× Ikeda, Naomi |
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著者所属 | ||||||
富士日立パワーセミコンダクタ | ||||||
著者所属 | ||||||
富士日立パワーセミコンダクタ | ||||||
著者所属 | ||||||
富士電機デバイステクノロジー | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属 | ||||||
宇宙航空研究開発機構(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Fuji Hitachi Power Semiconductor | ||||||
著者所属(英) | ||||||
en | ||||||
Fuji Hitachi Power Semiconductor | ||||||
著者所属(英) | ||||||
en | ||||||
Fuji Electric Device Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency(JAXA) | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 | p. 1-20, 発行日 2005-10 | |||||
関係URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://eeepitnl.tksc.jaxa.jp/mews/en/18th/text/203_kobayashi.pdf | |||||
関連名称 | https://eeepitnl.tksc.jaxa.jp/mews/en/18th/text/203_kobayashi.pdf | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 第18回マイクロエレクトロニクス・ワークショップ(2005年10月27-28日) | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: ARDS05365000 |