宮崎大学 : 中央電子工業
熊本高等専門学校
熊本高等専門学校
熊本高等専門学校
熊本高等専門学校
熊本高等専門学校
Institut de Microelectronica de Barcelona (CNM -CSIC) Campus UAB
imec
imec : E.E. Dept.
宮崎大学
著者所属（英）
University of Miyazaki : Chuo Denshi Kogyo Co. Ltd.
Kumamoto National College of Technology
Kumamoto National College of Technology
Kumamoto National College of Technology
Kumamoto National College of Technology
Kumamoto National College of Technology
Institut de Microelectronica de Barcelona (CNM -CSIC) Campus UAB
imec
imec : E.E. Dept.
University of Miyazaki
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
84 - 87
発行年
2013-03-29
抄録（英）
The 2-MeV electron radiation damage of Si(1-y)C(y) S/D n-type MOSFETs with different C concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences. These results indicate that the strain induced electron mobility enhancement due to C concentration is retained after irradiation in the studied devices.
内容記述
形態: カラー図版あり
内容記述（英）
Physical characteristics: Original contains color illustrations
Radiation damage of Si(1-y)C(y) Source/Drain n-MOSFETs with different carbon concentrations
61889018.pdf
(446.12KB)
