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Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method
https://jaxa.repo.nii.ac.jp/records/42544
https://jaxa.repo.nii.ac.jp/records/425448c9d7413-81d8-4b40-ab32-0cccb516a6f1
名前 / ファイル | ライセンス | アクション |
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32602001.pdf (1.1 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Experimental study of I[lc]n(sub x)G[lc]a(sub 1-x)A[lc]s homogeneous single crystal growth by the Traveling Liquidus-Zone (TLZ) method | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 単結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 移行液相ゾーン法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度勾配 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | In(sub x)Ga(sub 1-x)As | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 半導体 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 均質性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 熱シンク | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 熱伝播 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | single crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus zone method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature gradient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | In(sub x)Ga(sub 1 minus x)As | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | semiconductor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | homogeneity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | heat sink | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | heat transmission | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | 移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶成長の実験研究 | |||||
著者 |
花上, 康宏
× 花上, 康宏× 岩井, 正行× 鶴, 哲也× 村松, 祐治× 木下, 恭一× Hanaue, Yasuhiro× Iwai, Masayuki× Tsuru, Tetsuya× Muramatsu, Yuji× Kinoshita, Kyoichi |
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著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究システム | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Program | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals en : NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals p. 13-17, 発行日 2001-12-25 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Newly invented "Traveling Liquidus-Zone" (TLZ) method was applied to grow In(0.3)Ga(0.7)As single crystals. Homogeneous growth conditions were confirmed experimentally though controlling temperature gradient in the liquidus-zone and accurate measurements of it should be further developed. The validity of using heat sink to improve the heat flow for realizing flat or slightly convex growth interface was also confirmed. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00364784 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0032602001 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-010016E |