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Preparation of I[lc]nG[lc]aA[lc]s starting materials having the gradient I[lc]nA[lc]s concentration
https://jaxa.repo.nii.ac.jp/records/42547
https://jaxa.repo.nii.ac.jp/records/425479bdca348-eeed-4e1e-9ad1-4cb2124e7d67
名前 / ファイル | ライセンス | アクション |
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32602004.pdf (1.4 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Preparation of I[lc]nG[lc]aA[lc]s starting materials having the gradient I[lc]nA[lc]s concentration | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | In(sub x)Ga(sub 1-x)As | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InAs | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 移行液相ゾーン法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 方向性凝固 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 温度プロファイル | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 微小重力 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 過冷却 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | In(sub x)Ga(sub 1-x)As | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | InAs | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | directional solidification | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | temperature profile | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | microgravity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | supercooling | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | InAsの勾配濃度をもつInGaAs初期物質の調製 | |||||
著者 |
弘田, 龍
× 弘田, 龍× 龍見, 雅美× 花上, 康宏× 木下, 恭一× Hirota, Ryu× Tatsumi, Masami× Hanaue, Yasuhiro× Kinoshita, Kyoichi |
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著者所属 | ||||||
住友電気工業 伊丹研究所 | ||||||
著者所属 | ||||||
住友電気工業 伊丹研究所 | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究センター | ||||||
著者所属 | ||||||
宇宙開発事業団 宇宙環境利用研究システム | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Ltd. Itami Research Laboratories | ||||||
著者所属(英) | ||||||
en | ||||||
Sumitomo Electric Industries Ltd. Itami Research Laboratories | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Center | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan Space Utilization Research Program | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals en : NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals p. 51-57, 発行日 2001-12-25 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | InGaAs starting materials for the crystal growth by the TLZ (Traveling Liquides Zone) method were prepared by the directionally solidification method. The materials have a micro- and microscopically smooth InAs concentration profile without occurrence of a constitutional supercooling. The samples having nominal In composition(x) of 0.3 were cut from the source materials having x = 0.3 - 0.4. Concerning the constitutional supercooling, an evidence for free nucleation ahead of a growth interface from a measurement of microscopic composition profile has been found. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00364784 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0032602004 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-010016E |