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Evaluation of Cryogenic Readout Circuits with GaAs JFETs for Far-Infrared Detectors
https://jaxa.repo.nii.ac.jp/records/36694
https://jaxa.repo.nii.ac.jp/records/366940d2e5c31-a894-4e6e-8291-b013ae4bf069
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
SA4618377.pdf (410.8 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2015-03-26 | |||||||||
| タイトル | ||||||||||
| タイトル | Evaluation of Cryogenic Readout Circuits with GaAs JFETs for Far-Infrared Detectors | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | departmental bulletin paper | |||||||||
| 著者 |
OKUMURA, Kenichi
× OKUMURA, Kenichi
× HIROMOTO, Norihisa
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| 出版者 | ||||||||||
| 出版者 | 宇宙科学研究所 | |||||||||
| 出版者（英） | ||||||||||
| 出版者 | Institute of Space and Astronautical Science | |||||||||
| 書誌情報 |
en : The Institute of Space and Astronautical Science report. S.P. : Mid- and Far-Infrared Astronomy and Future Space Mission 巻 14, p. 345-351, 発行日 2000-12 |
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| 抄録（英） | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | The characteristics of gallium arsenide junction field-effect transistors (GaAs JFETs)and the performance of cryogenic readout circuits using GaAs JFETs for two-dimensional far-infrared arrays are evaluated at cryogenic temperature. We fabricated the GaAs JFETs withvarious gate sizes ranging from W/L = 5μm/0.5μm to 200μm/200μm to systematically measuretheir static characteristics and low-frequency noise spectra. We found that the low-frequency noisevoltage depends on the device size in the saturation region of GaAs JFETs at 4.2 K, and the powerdensity of the noise voltage is inversely proportional to the gate area. These findings allowed usto determine the Hooge parameter of the GaAs JFET at 4.2 K to be 4×10-5, assuming that thecarrier mobility is 1.5×10+3 cm2/Vs. On the other hand, we did not find the obvious correlationbetween the low-frequency noise and gate size in the ohmic region of GaAs JFETs. Based on thesemeasurements for GaAs JFETs, we fabricated and tested a dual GaAs JFET, a source-follower-per-detector (SFD) circuit, and a 20×3 channel SFD circuit array. The Common-Mode-Rejection-Ratio(CMRR) of the dual GaAs JFET with W/L = 50μm/20μm at 4.2 K was determined to be 40-60dB under small power dissipation. The performance of SFD circuits and the 20×3 channel SFDarrays for two-dimensional far-infrared Ge:Ga detector readouts are currently being evaluated. | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0288-433X | |||||||||
| 書誌レコードID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA10455137 | |||||||||
| 資料番号 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 資料番号: SA4618377000 | |||||||||
