Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Japan Aerospace Exploration Agency Office of Space Flight and Operations
Advanced Engineering Services Co. Ltd.
Advanced Engineering Services Co. Ltd.
Advanced Engineering Services Co. Ltd.
Advanced Engineering Services Co. Ltd.
出版者
宇宙航空研究開発機構
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構研究開発報告
雑誌名(英)
JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals
巻
JAXA-RR-04-022E
ページ
14 - 20
発行年
2005-03-31
抄録（英）
The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here.
In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
48451002.pdf
(1.88MB)
