WEKO3
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In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
https://jaxa.repo.nii.ac.jp/records/2364
https://jaxa.repo.nii.ac.jp/records/2364aef3edf8-bbd1-4a97-99ee-492ce7e69610
名前 / ファイル | ライセンス | アクション |
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48451002.pdf (1.9 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 飽和溶融帯移動法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶化 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 砒素化合物 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 液相線 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 1方向凝固 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 重力条件 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | レーザダイオード | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | インジウムガリウム砒素 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 対流 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 成長モデル | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 板状結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 溶液ゾーン | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus-zone method | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystallization | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | arsenic compound | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | liquidus | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | directional solidification | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | gravity condition | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | laser diode | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | indium gallium arsenide | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | convection | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | growth model | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | plate crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | solution zone | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | Traveling Liquidus-Zone法による板状のIn(0.3)Ga(0.7)As結晶成長 | |||||
著者 |
木下, 恭一
× 木下, 恭一× 緒方, 康行× 足立, 聡× 越川, 尚清× 鶴, 哲也× 宮田, 浩旭× 村松, 祐治× 依田, 真一× Kinoshita, Kyoichi× Ogata, Yasuyuki× Adachi, Satoshi× Koshikawa, Naokiyo× Tsuru, Tetsuya× Miyata, Hiroaki× Muramatsu, Yuji× Yoda, Shinichi |
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著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙基幹システム本部 | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属 | ||||||
エイ・イー・エス | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Office of Space Flight and Operations | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Advanced Engineering Services Co. Ltd. | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構 | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構研究開発報告 en : JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals 巻 JAXA-RR-04-022E, p. 14-20, 発行日 2005-03-31 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-1113 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA1192675X | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0048451002 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-RR-04-022E |