Fujitsu Laboratories Ltd.
National Space Development Agency of Japan Space Utilization Research Program
National Space Development Agency of Japan Space Utilization Research Center
National Space Development Agency of Japan Space Utilization Research Program
出版者
宇宙開発事業団
出版者（英）
National Space Development Agency of Japan (NASDA)
雑誌名
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
雑誌名(英)
NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals
ページ
59 - 64
発行年
2001-12-25
抄録（英）
In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growing In(x)Ga(1-x)As crystal was increased from 0.04 to 0.3 before being maintained at 0.3 for several millimeters of growth. Efforts to increase the single crystalline growth yield have been carried out this year. The appearance of poly-crystallization in the initial stages, during the stage of increasing InAs composition, and during the constant-composition growth stage were studied. Measures were taken to prevent poly-crystalline growth. The yield of single-crystalline structures was thus increased from 0.05 to 0.5. These improved conditions of growth have been used to prepare ten seed crystals for ground experiments.
I[lc]n(sub 0.3)G[lc]a(sub 0.7)A[lc]s seed crystal preparation using the multi-component zone melting method
32602005.pdf
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