Nihon University
Nihon University
Nihon University
Japan Atomic Energy Agency (JAEA)
Japan Atomic Energy Agency (JAEA)
Japan Atomic Energy Agency (JAEA)
Japan Atomic Energy Agency (JAEA)
出版者
宇宙航空研究開発機構(JAXA)
出版者（英）
Japan Aerospace Exploration Agency (JAXA)
雑誌名
宇宙航空研究開発機構特別資料
雑誌名(英)
JAXA Special Publication
巻
JAXA-SP-12-008E
ページ
131 - 133
発行年
2013-03-29
抄録（英）
We have investigated the transient current in a SOI p+n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.
内容記述
形態: カラー図版あり
内容記述（英）
Physical characteristics: Original contains color illustrations
Suppression of Heavy-Ion induced Current in SOI Device
61889028.pdf
(159.96KB)
