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3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs
https://jaxa.repo.nii.ac.jp/records/4310
https://jaxa.repo.nii.ac.jp/records/43109747f0e3-c5b5-4847-afef-f3afce46629f
名前 / ファイル | ライセンス | アクション |
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61889016.pdf (338.0 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | 3-D Simulation of Angled Strike Heavy-Ion Induced Charge Collection in SiGe HBTs | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | SiGe HBT | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Angled strike | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | SEE | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Charge collection | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | 3-D numerical simulation | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Zhang, Jin-Xin
× Zhang, Jin-Xin× Guo, Hong-Xia× Wen, Lin× Guo, Qi× Lu, Wu× Cui, Jiang-Wei× Wang, Xin× Deng, Wei× Zhen, Qi-Wen× Xiao, Yao× Fan, Xue× Zhang, Jin-Xin× Guo, Hong-Xia× Wen, Lin× Guo, Qi× Lu, Wu× Cui, Jiang-Wei× Wang, Xin× Deng, Wei× Zhen, Qi-Wen× Xiao, Yao× Fan, Xue |
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著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属 | ||||||
Northwest Institution of Nuclear Technology | ||||||
著者所属 | ||||||
State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Northwest Institution of Nuclear Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属(英) | ||||||
en | ||||||
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry CAS : Graduate University of Chinese Academy of Sciences | ||||||
著者所属(英) | ||||||
en | ||||||
Northwest Institution of Nuclear Technology | ||||||
著者所属(英) | ||||||
en | ||||||
State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication 巻 JAXA-SP-12-008E, p. 76-79, 発行日 2013-03-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | This paper presents 3-D simulation of angled strike heavy ion induced charge collection in Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). We select several different striking angles at various typical ion strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Angled strike ions induced charge collection present complex situation. With the change of striking angle, the longer the length of the ions track in sensitive volume, the more charge is collected. STI will prevent a part of diffused charge that charge collection reduces. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 著者人数: 11名 | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Number of authors: 11 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0061889016 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-12-008E |