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Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions
https://jaxa.repo.nii.ac.jp/records/42841
https://jaxa.repo.nii.ac.jp/records/42841c59fb41a-3b8f-4ecb-86f4-e8b341c8d679
名前 / ファイル | ライセンス | アクション |
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45402002.pdf (666.5 kB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 半導体材料 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 砒化ガリウム | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 砒化インジウム | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 数値解析 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 移動液相線ゾーン | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 微小重力 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Boussinesq近似 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶・溶液界面 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | semiconductor material | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | indium arsenide | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | gallium arsenide | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | numerical analysis | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | traveling liquidus zone | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | microgravity | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Boussinesq approximation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal-solution interface | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル | ||||||
その他のタイトル | 微小重力条件下でのInAs-GaAs2成分系半導体の結晶成長の数値解析 | |||||
著者 |
前川, 透
× 前川, 透× 杉木, 喜洋× 松本, 聡× Maekawa, Toru× Sugiki, Yoshihiro× Matsumoto, Satoshi |
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著者所属 | ||||||
東洋大学 | ||||||
著者所属 | ||||||
東洋大学 | ||||||
著者所属 | ||||||
宇宙開発事業団 | ||||||
著者所属(英) | ||||||
en | ||||||
Toyo University | ||||||
著者所属(英) | ||||||
en | ||||||
Toyo University | ||||||
著者所属(英) | ||||||
en | ||||||
National Space Development Agency of Japan | ||||||
出版者 | ||||||
出版者 | 宇宙開発事業団 | |||||
出版者(英) | ||||||
出版者 | National Space Development Agency of Japan (NASDA) | |||||
書誌情報 |
宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals en : NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals p. 19-28, 発行日 2002-12-27 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The crystal growth process of an InAs-GaAs binary semiconductor is investigated by the Traveling Liquidus Zone (TLZ) method numerically and the possibility of growing a bulk In(0.3)Ga(0.7)As crystal is discussed. First this new crystal growth technique is reviewed and then a numerical model and calculation method of the growth of binary crystals are explained. It is focused on the effect of the solution zone width on the crystal growth process and the generation of supercooling in the solution in order to grow In0.3Ga0.7As. It is found that a uniform In(0.3)Ga(0.7)As can be grown by the TLZ method under 1 microgram conditions by adjusting the solution zone width and the temperature gradient in the solution at appropriate values. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-7888 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00364784 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0045402002 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: NASDA-TMR-020024E |